Defects oriented along the basal plane, such as stacking faults and basal plane dislocations, can be among the most elusive defects in silicon carbide. Ultrafast transient reflectance imaging is sensitive to both basal plane dislocations and stacking faults through their effects on the electronic bandstructure.
However, because of the coherent nature of transient reflectance, defects tilted along the basal plane produce fringes in homodyne detection, obscuring defect signatures and prohibiting large spot sizes.
MONSTR Sense’s innovative heterodyne interferometric detection isolates signals from defects oriented along the basal plane, eliminating fringes, and increasing sensitivity and specificity for stacking faults and basal plane dislocations in silicon carbide.
